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Si6975DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
0.4
100
80
0.2
0.0
- 0.2
- 0.4
I D = 250 μA
60
40
20
0
- 50
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
T J - Temperature (°C)
Threshold Voltage
Time (s)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P DM
t 1
t 2
0.02
Single Pulse
t 1
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 124 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
1 0
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71319 .
www.vishay.com
4
Document Number: 71319
S-81221-Rev. B, 02-Jun-08
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